參數(shù)資料
型號(hào): MMT05A230T3
廠商: ON SEMICONDUCTOR
元件分類: 浪涌電流限制器
英文描述: Thyristor Surge Protectors(晶闡管浪涌電壓保護(hù)器)
中文描述: 265 V, SILICON SURGE PROTECTOR
封裝: CASE 403D-02, SMA, 2 PIN
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 62K
代理商: MMT05A230T3
MMT05A230T3, MMT05A260T3, MMT05A310T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range
Blocking or Conducting State
T
J1
40 to +125
°
C
Overload Junction Temperature Maximum Conducting State Only
T
J2
+175
°
C
Instantaneous Peak Power Dissipation (I
pk
= 50A, 10x1000
μ
sec @ 25
°
C)
P
PK
2000
W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/
μ
s, I
SC
= 1.0 A, Vdc = 1000 V)
MMT05A230T3
MMT05A260T3
MMT05A310T3
(+65
°
C)
MMT05A230T3
MMT05A260T3
MMT05A310T3
V
(BO)
265
320
365
280
340
400
Volts
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms),
R
I
= 1.0 k
Ω
, t = 0.5 cycle) (Note 3)
MMT05A230T3
MMT05A260T3
MMT05A310T3
(+65
°
C)
MMT05A230T3
MMT05A260T3
MMT05A310T3
V
(BO)
265
320
365
280
340
400
Volts
Breakover Voltage Temperature Coefficient
dV
(BO)
/dT
J
0.08
%/
°
C
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities
MMT05A230T3
MMT05A260T3
MMT05A310T3
V
(BR)
190
240
280
Volts
Off State Current (V
D1
= 50 V) Both polarities
Off State Current
(V
D2
= V
DM
) Both polarities
I
D1
I
D2
2.0
5.0
μ
A
OnState Voltage (I
T
= 1.0 A)
(PW
300
μ
s, Duty Cycle
2%) (Note 3)
V
T
1.53
3.0
Volts
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 k
Ω
)
Both polarities
I
BO
230
mA
Holding Current (Both polarities)
V
S
= 500 Volts; I
T
(Initiating Current) =
(Note 3)
1.0 Amp
I
H
150
340
mA
Critical Rate of Rise of OffState Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25
°
C)
dv/dt
2000
V/
μ
s
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V(rms) Signal)
Capacitance
(f = 1.0 MHz, 2.0 Vdc, 1.0 V(rms) Signal)
C
O
22
35
50
pF
3. Measured under pulse conditions to reduce heating.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMT05A230T3_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Thyristor Surge Protectors High Voltage Bidirectional TSPD
MMT05A230T3G 功能描述:硅對(duì)稱二端開關(guān)元件 50A Surge 265V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
MMT05A260T3 功能描述:硅對(duì)稱二端開關(guān)元件 50A Surge 320V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
MMT05A260T3G 功能描述:硅對(duì)稱二端開關(guān)元件 50A Surge 320V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
MMT05A310T3 功能描述:硅對(duì)稱二端開關(guān)元件 50A Surge 365V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA