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參數(shù)資料
| 型號： | MMST918 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | NPN High Frequency Transistor |
| 中文描述： | npn型高頻晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 70K |
| 代理商： | MMST918 |
MMST918 / PN918
Transistors
z
Electrical characteristic curves
20
180
μ
A
Ta
=
25
°
C
V
CE
=
10V
2/2
0
10
20
0
10
I
B
=0
μ
A
20
μ
A
40
μ
A
60
μ
A
80
μ
A
100
μ
A
120
μ
A
140
μ
A
160
μ
A
Ta=25
°
C
C
(
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
Fig.1 Typical output characteristics
0.1
0.2
0.5
1
2
5
10
20
50 100
100
200
500
1000
10
20
50
D
F
COLLECTOR CURRENT : Ic
(mA)
Fig.2 DC current gain vs.
collector current
0.1
0.2
0.5
1
2
5
10
20
50
100
0.2
0.3
0.1
0
C
C
(
COLLECTOR CURRENT : Ic (mA)
Ta
=
25
°
C
I
C
/ I
B
=
10
Fig.3 Collector-emitter saturation
voltage vs. collector current
0.1
0.2
0.5
1
2
5
10
20
50
100
0.8
0.6
1.2
1.0
1.8
1.6
1.4
0.4
0.2
0
B
B
(
COLLECTOR CURRENT : Ic (mA)
Ta
=
25
°
C
V
CE
=
10V
Fig.5 Base-emitter 'ON' voltage
vs. collector current
0.1
0.2
REVERSE BIAS VOLTAGE : V
(V)
0.5
1
2
5
10
20
50 100
1
2
5
10
0.1
0.2
0.5
C
(
Ta
°
C
f
=
1MHz
Cob
Fig.6 Capacitance vs.
reverse bias voltage
Cib
0.1
0.2
0.5
1
2
5
10
20
50 100
0.8
1.0
1.2
1.4
1.8
1.6
0.2
0.4
0.6
0
B
B
(
COLLECTOR CURRENT : Ic
(mA)
Ta
=
25
°
C
I
C
/ I
B
=
10
Fig.4 Base-emitter saturation voltage
vs. collector current
0.1
0.2
0.5
1
2
5
10
20
50
100
5000
2000
1000
500
200
100
50
C
(
COLLECTOR CURRENT : Ic (mA)
Ta
=
25
°
C
V
CE
=
5V
Fig.7 Current gain bandwidth product
vs. collector current
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