參數(shù)資料
型號： MMST918
廠商： Rohm CO.,LTD.
英文描述： NPN High Frequency Transistor
中文描述： npn型高頻晶體管
文件頁數(shù)： 1/3頁
文件大?。?/td> 70K
代理商： MMST918
MMST918 / PN918
Transistors
NPN High Frequency Transistor
1/2
MMST918 / PN918
z
Features
1) High current gain-bandwidth product f
T
=600MHz
z
Package, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic(pieces)
MMST918
SMT3
RVX
T146
3000
PN918
TO-92
T93
3000
z
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
30
15
3
50
0.2
0.310
150
55 to
+
150
Unit
V
V
V
A
W
W
°
C
°
C
P
C
MMST918
PN918
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
Junction temperature
Storage temperature
z
Electrical characteristics
(Ta = 25
°
C)
z
External dimensions
(Unit : mm)
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
(1) Emitter
(2) Base
(3) Collector
MMST918
PN918
0
～
0.1
2
±
0
1
0
～
0
1.1
0.8
±
0.1
0.15
0.4
2.9
±
0.2
1.9
±
0.2
0.950.95
+
0
0
0.1
+
0.2
+
0.1
0.06
+
0.1
0.05
(2)
(1)
(3)
4
±
0
(
2
4.8
±
0.2
3.7
±
0.2
5
0.45
2.3
0.5
±
0.1
0.05
+
0.15
2.5
+
0.3
0.1
(1)
(2)
(3)
All terminals have same dimensions
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
Min.
30
15
3.0
20
Typ.
Max.
0.01
1.0
Unit
V
V
V
μ
A
μ
A
Conditions
I
CBO
I
C
=
1.0
μ
A
I
C
=
3.0mA
I
E
=
10
μ
A
V
CB
=
15V
V
CB
=
15V , I
E
=0 , Ta=150
°
C
I
C
=
3.0mA , V
CE
=
1.0V
V
BE(sat)
f
T
1.0
1.7
3.0
2.0
6.0
V
V
CE(sat)
0.4
V
I
C
/I
B
=
10mA/1mA
I
C
/I
B
=
10mA/1mA
I
C
=
4.0mA , V
CE
=
10V, f
=
100MHz
V
CB
=
10V , I
E
=0 , f
=
140kHz
V
CB
=
0 , I
E
=0 , f
=
140kHz
V
EB
=
0.5V , I
C
=0 , f
=
140kHz
I
C
=
1.0mA , V
CE
=
6.0V ,RG
=
400
, f
=
60MHz
V
CB
=
12V , I
C
=
6.0mA , f=200MHz
V
CB
=
15V , I
C
=
8.0mA , f=500MHz
V
CB
=
15V , I
C
=
8.0mA , f=500MHz
h
FE
Cob
600
15
30
25
MHz
pF
pF
pF
dB
dB
mW
%
Cib
NF
Gpe
Pout
η
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Transition frequency
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Emitter input capacitance
Noise figure
Power gain
Output power
Collector efficiency
相關(guān)PDF資料
PDF描述
MMSTA05 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMSTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMSTA06 NPN General Purpose Transistor(通用NPN晶體管)
MMSTA13-7-F NPN SURFACE MOUNT DARLINGTON TRANSISTOR
MMSTA14-7-F NPN SURFACE MOUNT DARLINGTON TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMST918S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | SOT-23VAR
MMST918ST146 制造商:ROHM Semiconductor 功能描述:
MMST918T146 功能描述:兩極晶體管 - BJT SMT NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMSTA05 制造商:ROHM Semiconductor 功能描述:DRIVER NPN SMD (Surface Mount) Transistor SOT-23 制造商:ROHM Semiconductor 功能描述:DRIVER NPN SMD (Surface Mount) Transistor SOT-23 - free partial T/R at 500.
MMSTA05 BULK 制造商:ROHM Semiconductor 功能描述:DRIVER NPN SMD (Surface Mount) Transistor SOT-23 制造商:ROHM Semiconductor 功能描述:DRIVER NPN SMD (Surface Mount) Transistor SOT-23 - free partial T/R at 500.
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*