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參數(shù)資料
| 型號： | MMST6427 |
| 廠商： | Diodes Inc. |
| 英文描述： | NPN SURFACE MOUNT DARLINGTON TRANSISTOR |
| 中文描述： | npn型表面貼裝達林頓晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 46K |
| 代理商： | MMST6427 |
DS30166 Rev. 3 - 1
2 of 2
MMST6427
www.diodes.com
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
40
40
12
V
V
V
nA
A
nA
I
C
= 100 A, I
E
= 0
I
C
= 100mA, I
B
= 0
I
E
= 10 A, I
C
= 0
V
CB
= 30V, I
E
= 0
V
CE
= 25V, I
B
= 0
V
EB
= 10V, I
C
= 0
50
1.0
50
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
10,000
20,000
14,000
100,000
200,000
140,000
1.2
1.5
I
C
= 10mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 500mA, V
CE
= 5.0V
I
C
= 50mA, I
B
= 0.5mA
I
C
= 500mA, I
B
= 0.5mA
I
C
= 500mA, I
B
= 0.5mA
I
C
= 50mA, V
CE
=5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
Base- Emitter Saturation Voltage
Base- Emitter On Voltage
V
BE(SAT)
V
BE(ON)
2.0
1.75
V
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
8.0 Typical
15 Typical
pF
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Ordering Information
(Note 3)
Device
MMST6427-7
Packaging
SOT-323
Shipping
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.Marking Information
K1D= Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
K1D
Y
Year
Code
1998
J
1999
K
2000
L
2001
M
2002
N
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
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| MMSTA06 | NPN General Purpose Transistor(通用NPN晶體管) |
| MMSTA13-7-F | NPN SURFACE MOUNT DARLINGTON TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMST6427_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SURFACE MOUNT DARLINGTON TRANSISTOR |
| MMST6427_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SURFACE MOUNT DARLINGTON TRANSISTOR |
| MMST6427-7 | 功能描述:達林頓晶體管 NPN BIPOLAR RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMST6427-7-F | 功能描述:達林頓晶體管 NPN BIPOLAR RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMST6428 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23VAR |
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