參數資料
型號： MMSF7PO3HD
廠商： Motorola, Inc.
英文描述： TMOS SINGLE P-CHANNEL FIELD EFFECT TRANSISTORS
中文描述： TMOS是單P溝道場效應晶體管
文件頁數： 2/10頁
文件大?。?/td> 228K
代理商： MMSF7PO3HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (1)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(2)
IDSS
—
—
—
—
1.0
25
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
—
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 5.3 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
RDS(on)
—
—
26
42
35
50
m
Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc)
gFS
—
12
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc, VGS = 0 V,
f = 1.0 MHz)
24 Vdc V
Ciss
Coss
Crss
—
1200
1680
pF
Output Capacitance
—
580
810
Transfer Capacitance
—
160
220
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
(VDD = 15 Vdc, ID = 1.0 Adc,
VGS= 4 5 Vdc
VGS = 4.5 Vdc,
RG = 10
1 0 Ad
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
23.5
47
ns
Rise Time
—
42.7
85.4
Turn–Off Delay Time
—
57.4
114.8
Fall Time
)
—
53.6
107.2
Turn–On Delay Time
(VDD = 15 Vdc, ID = 1.0 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 6.0
1 0 Ad
—
16
32
Rise Time
—
15.2
30.6
Turn–Off Delay Time
—
99.7
199.4
Fall Time
)
—
55.2
110.4
Gate Charge
(See Figure 8)
(VDS = 10 Vdc,D
(DS
VGS = 6.0 Vdc)
4 9 Ad
—
37.9
75.8
nC
—
4.2
—
,
—
11.5
—
—
7.6
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 2.3 Adc, VGS = 0 Vdc)
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.76
0.61
1.2
—
Vdc
Reverse Recovery Time
(IS = 4.9 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
4 9 Ad
trr
ta
—
47.9
—
ns
—
27
—
,
tb
—
21
—
Reverse Recovery Stored Charge
QRR
—
0.052
—
μ
C
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(3) Switching characteristics are independent of operating junction temperature.
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