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參數(shù)資料
| 型號： | MMSF7N03ZR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 7.5 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIATURE, CASE 751-07, SOP-8 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 277K |
| 代理商： | MMSF7N03ZR2 |
MMSF7N03Z
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
I DSS
,LEAKAGE
(nA)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
0.4
1.6
2
0
2
6
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.08
0.1
0
Figure 3. OnResistance versus
GatetoSource Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
1
100
Figure 5. OnResistance Variation
with Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = 55°C
25
°C
100
°C
0.06
8
4
0.02
TJ = 25°C
4
8
10
2
2.6
3
3.4
3.8
0.04
02
4
8
10
0
5
10
15
30
3.8 V
20
25
0
0.02
0.04
6
24
8
6
10
VGS, GATETOSOURCE VOLTAGE (VOLTS)
6
10 V
VGS = 4.5
TJ = 25°C
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 2.5 A
125
75
25
VGS = 0 V
TJ = 125°C
100
°C
1.2
10
3.5 V
2.7 V
3.1 V
4.5 V
VGS = 10 V
ID = 2.5 A
TJ = 25°C
3.3 V
2.2
1.8
0
0.01
0.03
0.05
1000
0.8
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