- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98026 > MMSF7N03ZR2 (ON SEMICONDUCTOR) 7.5 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MMSF7N03ZR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 7.5 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIATURE, CASE 751-07, SOP-8 |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 277K |
| 代理商： | MMSF7N03ZR2 |
MMSF7N03Z
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Cpk ≥ 2.0)
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
35
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.03
0.15
2.0
10
μAdc
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0)
IGSS
1.3
5.0
μAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(Cpk ≥ 2.0)
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
2.0
5.5
3.0
Vdc
mV/°C
Static DraintoSource OnResistance
(Cpk ≥ 2.0)
(VGS = 10 Vdc, ID = 7.5 Adc)
(VGS = 4.5 Vdc, ID = 3.8 Adc)
RDS(on)
22
30
40
mΩ
Forward Transconductance (VDS = 3.0 Vdc, ID = 3.8 Adc)
(Note 4)
gFS
4.0
9.5
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
750
1500
pF
Output Capacitance
Coss
340
680
Transfer Capacitance
Crss
45
90
SWITCHING CHARACTERISTICS (Note 5)
TurnOn Delay Time
(VDS = 15 Vdc, ID = 5.0 Adc,
td(on)
40
80
ns
Rise Time
tr
90
180
TurnOff Delay Time
td(off)
470
940
Fall Time
tf
170
340
TurnOn Delay Time
(VDD = 15 Vdc, ID = 5.0 Adc,
td(on)
120
240
ns
Rise Time
tr
350
700
TurnOff Delay Time
td(off)
430
860
Fall Time
tf
140
280
Gate Charge
(VDS = 24 Vdc, ID = 5.0 Adc,
QT
34
48
nC
Q1
3.5
Q2
9.5
Q3
6.5
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 4)
(IS = 7.5 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.83
0.67
1.6
Vdc
Reverse Recovery Time
(IS = 7.5 Adc, VGS = 0 Vdc,
trr
110
ns
ta
22
tb
90
Reverse Recovery Storage Charge
QRR
0.17
μC
4. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
6. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMUN2113LT3G | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2134LT1G | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2131LT1G | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2130LT1G | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2113LT3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMSF7P03HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 7 A, 30 V, P−Channel SO−8 |
| MMSF7P03HDR2 | 功能描述:MOSFET 30V 7A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMSF7P03HDR2G | 功能描述:MOSFET PFET SO8S 30V 7A 35mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MM-SIO-R-01 | 功能描述:單板計(jì)算機(jī) MiniModule Super I/O for CM 730 Legacy IO RoHS:否 制造商:Ampro By ADLINK 外觀尺寸:EPIC 處理器類型:Intel Atom D510 頻率:1.66 GHz 存儲(chǔ)容量:2 GB (max) 存儲(chǔ)類型:DDR2, L2 Cache 接口類型:Ethernet, PS/2, SATA, Serial, USB 工作電源電壓:5 V, 12 V 功耗:13 W 最大工作溫度:+ 70 C 尺寸:165.1 mm x 114.3 mm |
| MMSKG1 | 制造商:Siemens 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。