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參數(shù)資料
| 型號(hào)： | MMSF5P02HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 8700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 208K |
| 代理商： | MMSF5P02HDR2 |
MMSF5P02HD
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
VGS=
8
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
2.0
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
12
8.0
10
6.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
3.0
1.0
4.0
2.0
0
VGS, GATE–TO–SOURCE (VOLTS)
0.06
0.04
0.02
0
ID, DRAIN CURRENT (AMPS)
2.0
0
0.04
0.02
0
4.0
–25
25
–50
TJ, JUNCTION TEMPERATURE (°C)
2.0
1.5
1.0
0.5
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
4.0
0
1000
100
10
1.0
16
0
I D
,DRAIN
CURRENT
(AMPS)
I
(W)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.5
1.0
1.5
2.5
1.5
2.0
6.0
12
2.0
4.0
6.0
8.0
10
6.0
8.0
,DRAIN–T
O–SOURCE
RESIST
ANCE
R
DS(on)
50
100
75
8.0
12
20
I DSS
,LEAKAGE
(nA)
,DRAIN
CURRENT
(AMPS)
D
R
DS(on)
125
150
(NORMALIZED)
TJ = 25°C
VGS = 4.5 V
2.5 V
VGS = 4.5 V
ID = 5.1 A
25
°C
100
°C
TJ = 125°C
VGS = 0 V
ID = 6.4 A
TJ = 25°C
TJ = –55°C
100
°C
25
°C
VDS ≥ 10 V
1.7 V
1.9 V
2.1 V
2.3 V
TJ = 25°C
2.5 V
2.7 V
3.1 V
4.5 V
3.7 V
0.06
10
12
8.0
10
4.0
2.0
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| MMSF7N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 8.0 AMPERES 30 VOLTS |
| MMSF7N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
| MMSF7N03Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS |
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| MMSF7P03HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 7 A, 30 V, P−Channel SO−8 |
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