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參數(shù)資料
| 型號(hào)： | MMSF5P02HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 8700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 208K |
| 代理商： | MMSF5P02HDR2 |
MMSF5P02HD
2
Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Symbol
Max
Unit
Drain–to–Source Voltage
VDSS
20
V
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
20
V
Gate–to–Source Voltage — Continuous
VGS
± 8.0
V
1 inch SQ.
FR–4 or G–10 PCB
10 seconds
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
RTHJA
PD
ID
IDM
50
2.5
20
8.7
7.0
43.5
°C/W
Watts
mW/
°C
A
Minimum
FR–4 or G–10 PCB
10 seconds
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
RTHJA
PD
ID
IDM
80
1.56
12.5
6.9
5.5
35
°C/W
Watts
mW/
°C
A
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 19 Apk, L = 5.5 mH, RG = 25 W)
EAS
1000
mJ
(1) Repetitive rating; pulse width limited by maximum junction temperature.
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