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參數(shù)資料
| 型號(hào)： | MMQA18VT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 318F-05, SC-74, 6 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 69K |
| 代理商： | MMQA18VT3G |
MMQA5V6T1 Series
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 3. Steady State Power Derating Curve
Figure 4. Pulse Derating Curve
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
P D
,POWER
DISSIP
ATION
(mW)
TA, AMBIENT TEMPERATURE (°C)
FR-5 BOARD
ALUMINA SUBSTRATE
100
90
80
70
60
50
40
30
20
10
00
25
50
75
100
125
150
175
200
TA, AMBIENT TEMPERATURE (°C)
PEAK
PULSE
DERA
TING
IN
%
OF
PEAK
POWER
OR
CURRENT
@
T A
=25
C°
Figure 5. 10
× 1000 ms Pulse Waveform
VALUE
(%)
100
50
0
123
4
t, TIME (ms)
tr
tP
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF IRSM.
tr ≤ 10 ms
HALF VALUE
IRSM
2
PEAK VALUEIRSM
Figure 6. 8
× 20 ms Pulse Waveform
Figure 7. Maximum NonRepetitive Surge
Power, Ppk versus PW
Figure 8. Typical Maximum NonRepetitive
Surge Power, Ppk versus VBR
Ppk
PEAK
SURGE
POWER
(W)
0.1
1.0
10
100
1000
1.0
10
100
Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
100
90
80
70
60
50
40
30
20
10
0
020
40
60
80
t, TIME (ms)
%
OF
PEAK
PULSE
CURRENT
200
180
160
140
120
100
80
60
40
20
0
5.6
6.8
12
20
33
NOMINAL VZ
P
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
27
,PEAK
SURGE
POWER
(W)
PK
8 × 20 WAVEFORM AS PER FIGURE 6
10 × 100 WAVEFORM AS PER FIGURE 5
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