參數(shù)資料
型號： MMQA18VT3G
廠商： ON SEMICONDUCTOR
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封裝： LEAD FREE, PLASTIC, CASE 318F-05, SC-74, 6 PIN
文件頁數(shù)： 2/6頁
文件大小： 69K
代理商： MMQA18VT3G
UniDirectional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
MMQA5V6T1 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 0.9 V Max. @ IF (Note 5) = 10 mA)
Unidirectional (Circuit tied to Pins 1, 2 and 5; Pins 2, 3 and
5; or 2, 4 and 6; or Pins 2, 5 and 6)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
ZZT
Maximum Zener Impedance @ IZT
VBR
Breakdown Voltage @ IT
IT
Test Current
QVBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ 1.0 ms @ TL ≤ 25°C
PPK
24
W
Peak Power Dissipation (Note 2) @ 20
ms @ TL ≤ 25°C
PPK
150
W
Total Power Dissipation (Note 3)
@ TA = 25°C Derate Above 25°C
Thermal Resistance Junction to Ambient
PD
RqJA
225
1.8
556
mW
mW/
°C
°C/W
Total Power Dissipation (Note 4) @ TA = 25°C
Derate Above 25
°C
Thermal Resistance Junction to Ambient
PD
RqJA
300
2.4
417
mW
mW/
°C
°C/W
Junction and Storage Temperature Range
TJ, Tstg
55 to +150
°C
1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 4
2. Nonrepetitive current pulse per Figure 6 and derated above TA = 25°C per Figure 4
3. FR5 board = 1.0 X 0.75 X 0.62 in.
4. Alumina substrate = 0.4 X 0.3 X 0.024 in., 99.5% alumina
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