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參數(shù)資料
| 型號(hào)： | MMFT6661T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 12/34頁 |
| 文件大小： | 325K |
| 代理商： | MMFT6661T3 |
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MMFT6661T1
4–85
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 10 A)
V(BR)DSS
90
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 90 V, VGS = 0)
IDSS
—
10
Adc
Gate–Body Leakage Current
(VGS = 15 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
—
2.0
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.0 Adc)
RDS(on)
—
4.0
Ohms
Drain–to–Source On–Voltage
(VGS = 10 V, ID = 1.0 A)
(VGS = 5.0 V, ID = 0.3 A)
VDS(on)
—
4.0
1.6
Vdc
Forward Transconductance
(VDS = 25 V, ID = 0.5 A)
gFS
—
200
—
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 V V
0
Ciss
—
36
—
pF
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Coss
—
16
—
Transfer Capacitance
f
1.0 MHz)
Crss
—
6.0
—
Total Gate Charge
(V
10 V I
1 0 A
Qg
—
1.7
—
nC
Gate–Source Charge
(VGS = 10 V, ID = 1.0 A,
VDS = 72 V)
Qgs
—
0.34
—
Gate–Drain Charge
VDS 72 V)
Qgd
—
0.23
—
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2.0%
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
3
0
10
8
6
4
2
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURR
E
N
T
(AMPS)
4 V
VGS = 10 V
1.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
0
8
6
4
2
0
TJ = – 55°C
TJ = 25°C
5 V
6 V
7 V
1.2
0.9
0.6
0.3
VDS = 10 V
8 V
2.5
2
1.5
1
0.5
125
°C
25
°C
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