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參數(shù)資料
| 型號： | MMFT5P03HDT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 3.7 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 封裝： | MINIATURE, CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 198K |
| 代理商： | MMFT5P03HDT3 |
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
R
ID
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (
°
C)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID
ID
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
2
6
10
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
00.1
1000
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
VDS
≥
10 V
–55
°
C
3
25
°
C
ID = 4 A
TJ = 25
°
C
0
4
8
0
– 25
0
25
50
75
100
125
150
0
6
12
30
VGS = 0 V
TJ = 125
°
C
TJ = 25
°
C
VGS = 4.5 V
100
18
100
°
C
4
8
6
2
10 V
8
6
4
2
0
TJ = 100
°
C
0.3
0.2
0.1
0
0.3
0.2
0
8
6
4
2
02
2.5
4
3.5
4.5
0.1
0.5
1
2
1.5
VGS = 10 V
ID = 2 A
8 V
6 V
0
0.4
0.8
1.6
1.2
2
TJ = 25
°
C
3.1 V
VGS = 10 V
3.5 V
3.3 V
4.5 V
3.7 V
3.9 V
4.1 V
4.3 V
2.7 V
10
10
3
7
5
1
24
0.1
1
10
25
°
C
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