- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371126 > MMFT5P03HDT3 (ON SEMICONDUCTOR) 30V N-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MMFT5P03HDT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 3.7 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 封裝： | MINIATURE, CASE 318E-04, 4 PIN |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 198K |
| 代理商： | MMFT5P03HDT3 |
2
Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Symbol
VDSS
VDGR
VGS
RTHJA
PD
Max
30
30
±
20
40
3.13
25
5.2
4.1
26
Unit
V
V
V
°
C/W
Watts
mW/
°
C
A
A
A
°
C/W
Watts
mW/
°
C
A
A
A
°
C
mJ
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
1 inch SQ.
FR–4 or G–10 PCB
10 seconds
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
ID
ID
IDM
RTHJA
PD
Minimum
FR–4 or G–10 PCB
10 seconds
ID
ID
IDM
TJ, Tstg
EAS
80
1.56
12.5
3.7
2.9
19
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.5 mH, RG = 25 )
(1) Repetitive rating; pulse width limited by maximum junction temperature.
– 55 to 150
250
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMFT5P03HD | TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS |
| MMG05N60D | POWERLUX IGBT |
| MMG05N60D | Insulated Gate Bipolar Transistor |
| MMPQ2222 | Quad General Purpose Transistors |
| MMPQ2222A | Quad General Purpose Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMFT6N03HD | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER 6.0 AMPERES 30 VOLTS |
| MMFT960T1 | 功能描述:MOSFET 60V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMFT960T1_06 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 |
| MMFT960T1G | 功能描述:MOSFET 60V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMFTN123 | 制造商:Diotec Semiconductor 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。