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參數(shù)資料
| 型號： | MMFT2N25E |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SPST, 150mA PC Mount Pushbutton |
| 中文描述： | 2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 139K |
| 代理商： | MMFT2N25E |
4
Motorola TMOS Power MOSFET Transistor Device Data
td(on)
Figure 7. Capacitance Variation
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
25
–10
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
300
250
200
150
100
QG, TOTAL GATE CHARGE (nC)
6.0
10
0
6.0
2.0
0
100
RG, GATE RESISTANCE (OHMS)
100
10
1.0
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
0.5
0.3
2.0
1.0
0.5
0
0.6
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
50
25
60
10
0
75
1.0
C
I
50
0
10
–5.0
15
TJ = 25
°
C
8.0
2.0
4.0
4.0
8.0
10
1.0
10
0.7
0.8
0.9
1.0
,
I
10
100
10
125
150
100
E
350
V 12
0.4
1.5
t
1000
0
20
5.0
VGS = 0 V
VDS = 0 V
Ciss
Crss
Ciss
Crss
Coss
TJ = 25
°
C
ID = 2.0 A
Q3
Q2
Q1
QT
VDS
VGS
TJ = 25
°
C
ID = 2.0 A
VDD = 125 V
VGS = 10 V
td(off)
tf
tr
TJ = 25
°
C
VGS = 0 V
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
100 s
1.0 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
A
20
30
40
50
ID = 2.0 A
250
200
150
100
50
0
V
VDS
VGS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| MMFT3055EL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS |
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