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參數(shù)資料
| 型號： | MMFT2955E |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS |
| 中文描述： | 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 178K |
| 代理商： | MMFT2955E |
1
Motorola TMOS Power MOSFET Transistor Device Data
P–Channel Enhancement Mode
Silicon Gate TMOS E–FET
SOT–223 for Surface Mount
This advanced E–FET is a TMOS medium power MOSFET
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient device also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. The device is housed in the
SOT–223 package which is designed for medium power surface
mount applications.
Silicon Gate for Fast Switching Speeds
Low RDS(on) — 0.3
max
The SOT–223 Package can be Soldered Using Wave or Re-
flow. The Formed Leads Absorb Thermal Stress During Sol-
dering, Eliminating the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
Use MMFT2955ET1 to order the 7 inch/1000 unit reel.
Use MMFT2955ET3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDS
VGS
60
Vdc
Gate–to–Source Voltage — Continuous
±
15
Drain Current — Continuous
Drain Current
— Pulsed
ID
IDM
1.2
4.8
Adc
Total Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD(1)
0.8
6.4
Watts
mW/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–65 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 V, VGS = 10 V, Peak IL= 1.2 A, L = 0.2 mH, RG = 25
)
108
mJ
DEVICE MARKING
2955
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
R
θ
JA
156
°
C/W
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
TL
260
10
°
C
Sec
(1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 4
Order this document
by MMFT2955E/D
SEMICONDUCTOR TECHNICAL DATA
D
S
G
TMOS MEDIUM POWER FET
1.2 AMP
60 VOLTS
RDS(on) = 0.3 OHM
Motorola Preferred Device
CASE 318E–04, STYLE 3
TO–261AA
1
2
3
4
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| MMFT3055VL | TMOS POWER FET 1.5 AMPERES 60 VOLT |
| MMFT3055E | MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS |
| MMFT3055V | TMOS POWER FET 1.7 AMPERES 60 VOLTS |
| MMFT6N03HD | TMOS POWER 6.0 AMPERES 30 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMFT2955ET1 | 制造商:ON Semiconductor 功能描述:MOSFET P SOT-223 |
| MMFT2N02EL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MEDIUM POWER LOGIC LEVEL TMOS FET 1.6 AMP 20 VOLTS |
| MMFT2N02ELT1 | 功能描述:MOSFET N-CH 20V 1.6A SOT223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MMFT2N25E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 250 VOLTS |
| MMFT2N25ET3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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