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參數(shù)資料
| 型號(hào)： | MMDF4N01HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS |
| 中文描述： | 4 A, 12 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-05, SOIC-8 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 281K |
| 代理商： | MMDF4N01HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 4.5 V
ID = 4 A
8
TJ = 25
°
C
4.5 V
3.1 V
2.7 V
VGS = 8 V
2.5 V
2.3 V
2.1 V
1.9 V
1.5 V
1.3 V
1.7 V
TJ = 25
°
C
VGS = 2.7 V
4.5 V
0
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.8
1.2
1.6
2
0.2
0.6
1
1.4
1.8
0
2
4
6
R
(
R
Figure 1. On–Region Characteristics
ID
1
1.2
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
1.4
2.2
ID
Figure 2. Transfer Characteristics
0
2
4
8
0.03
0.04
0.05
0.06
0.07
0
2
4
8
0.030
0.035
0.040
0.050
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
4
12
100
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
VDS
≥
10 V
VGS = 0 V
TJ = 25
°
C
ID = 2 A
1.6
1.8
2
6
–50
–25
0
25
50
75
100
125
150
TJ = 125
°
C
10
8
10
100
°
C
R
0
2
4
8
6
25
°
C
100
°
C
TJ = –55
°
C
0.045
6
6
0
0.5
1
2
1.5
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|---|---|
| MMDF4N01HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: 制造商:MOTOROLA 功能描述: |
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| MMDF-4SNB-1 | 制造商:Maxconn 功能描述: |
| MMDF5N02Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS |
| MMDF6N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS |
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