參數(shù)資料
型號: MMDF4N01HD
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS
中文描述: 4 A, 12 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: CASE 751-05, SOIC-8
文件頁數(shù): 1/10頁
文件大小: 281K
代理商: MMDF4N01HD
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
ID
ID
IDM
20
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
20
Vdc
±
12
Vdc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 100
°
C
Drain Current
— Single Pulse (tp
10
μ
s)
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
Thermal Resistance — Junction to Ambient (1)
5.2
4.1
48
Adc
Apk
PD
2.0
Watts
TJ, Tstg
R
θ
JA
TL
– 55 to 150
°
C
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
from case for 10 seconds
260
°
C
DEVICE MARKING
D4N01
(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
13
12 mm embossed tape
Quantity
MMSF4N01HDR2
2500 units
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MMDF4N01HD/D
SEMICONDUCTOR TECHNICAL DATA
D
S
CASE 751–05, Style 11
SO–8
Source–1
Gate–1
Source–2
Gate–2
1
2
3
4
8
7
6
5
Top View
Drain–1
Drain–1
Drain–2
Drain–2
DUAL TMOS
POWER MOSFET
4.0 AMPERES
20 VOLTS
RDS(on) = 0.045 OHM
Motorola Preferred Device
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 5
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