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參數(shù)資料
| 型號(hào)： | MMDF4207R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4.8 A, 20 V, 0.033 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIATURE, CASE 751-06, SOP-8 |
| 文件頁(yè)數(shù)： | 6/11頁(yè) |
| 文件大?。?/td> | 241K |
| 代理商： | MMDF4207R2 |
MMDF4207
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
10 V
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
4
10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
02
0
6
10
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2
04
10
0
0.03
02
4
10
0.05
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance versus
GateToSource Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
1.5
2.0
812
16
1
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 125°C
25
°C
55
°C
TJ = 25°C
VGS = 0 V
TJ = 25°C
ID = 5 A
VGS = 2.5 V
ID = 5 A
3
68
4.5 V
50
25
0
25
50
75
100
125
150
TJ = 125°C
1.0
10
20
100
°C
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
0.2
0.4
1.2
0.6
1.0
1.4
1.6
2.0
2
6
2
8
0.02
0.03
0.04
0
0.5
0
0.1
0.04
0.01
8
25
°C
0.8
1.8
VGS = 10 V thru 1.5 V
TJ = 25°C
1.7 V
2.5 V
1
0
1000
4
0.5
2.5
1.5
0.05
8
1.6 V
1.5 V
4.5 V
2.1 V
1.8 V
1.9 V
4
0.01
6
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