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參數(shù)資料
| 型號(hào)： | MMDF4207R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4.8 A, 20 V, 0.033 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIATURE, CASE 751-06, SOP-8 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 241K |
| 代理商： | MMDF4207R2 |
MMDF4207
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Characteristics
Symbol
Maximum
Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MW)
GatetoSource Voltage — Continuous
VDSS
VDGR
VGS
20
12
±1 2
V
1 Inch Square @
10 seconds on
FR4 or G10 PCB
Thermal Resistance
— Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (1)
RTHJA
PD
ID
IDM
62.5
2.0
16
7.8
5.7
40
°C/W
Watts
mW/°C
A
1 Inch Square @
Steady State on
FR4 or G10 PCB
Thermal Resistance
— Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (1)
RTHJA
PD
ID
IDM
98
1.28
10.2
6.2
4.6
35
°C/W
Watts
mW/°C
A
Minimum Pad @
Steady State on
FR4 or G10 PCB
Thermal Resistance
— Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (1)
RTHJA
PD
ID
IDM
166
0.75
6.0
4.8
3.5
30
°C/W
Watts
mW/°C
A
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 5.0 Apk, L = 40 mH, RG = 25 W)
EAS
500
mJ
(1) Repetitive rating; pulse width limited by maximum junction temperature.
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