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參數(shù)資料
| 型號(hào)： | MMDF3NO2HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| 中文描述： | TMOS是雙N溝道場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 188K |
| 代理商： | MMDF3NO2HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
3.9 V
R
(
R
0
2
4
6
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
1
1.4
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
1.8
3.4
0
2
4
6
ID
Figure 2. Transfer Characteristics
0
1
2
3
4
10
0
0.2
0.4
0.6
0
1
2
3
4
6
0.05
0.06
0.07
0.08
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
1
1.2
1.4
1.6
0
4
8
20
1
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
VDS
≥
10 V
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
ID = 1.5 A
TJ = 25
°
C
VGS = 4.5 V
VGS = 10 V
ID = 1.5 A
2.2
2.6
3
5
6
7
8
9
5
10 V
–50
–25
0
25
50
75
100
125
150
TJ = 125
°
C
0.8
10
12
16
25
°
C
100
°
C
R
0
0.2
0.4
0.6
0.8
1.4
1
1.2
1.6
1.8
2
1
3.7 V
3.1 V
2.7 V
2.9 V
VGS = 10 V
4.5 V
3.3 V
3.5 V
2.5 V
TJ = 25
°
C
5
3
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