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參數(shù)資料
| 型號： | MMDF2N06V |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS |
| 中文描述： | 3300 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-05, SO-8 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 113K |
| 代理商： | MMDF2N06V |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
—
66
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.8
5.8
4.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.3 Adc)
RDS(on)
—
0.106
0.115
Ohm
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 3.3 Adc)
(VGS = 10 Vdc, ID = 1.7 Adc, TJ = 150
°
C)
VDS(on)
—
—
—
—
0.5
0.4
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 1.7 Adc)
gFS
4.0
7.0
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
370
520
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
110
150
Transfer Capacitance
—
25
50
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
9.0
20
ns
Rise Time
(VDD = 30 Vdc, ID = 3.3 Adc,
VGS = 10 Vdc,
—
7.0
10
Turn–Off Delay Time
—
34
70
Fall Time
—
18
40
Gate Charge
VGS = 10 Vdc)
—
15
20
nC
(VDS = 48 Vdc, ID = 3.3 Adc,
—
3.0
—
—
4.0
—
—
5.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 3.3 Adc, VGS = 0 Vdc)
(IS = 3.3 Adc, VGS = 0 Vdc, TJ =
150
°
C)
VSD
—
—
0.82
0.64
1.2
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
39
—
ns
(IS = 3.3 Adc, VGS = 0 Vdc,
—
33
—
—
6.0
—
Reverse Recovery Storage Charge
QRR
—
0.075
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF2N06VL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS |
| MMDF2P01HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| MMDF2P01HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MMDF2P02E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS |
| MMDF2P02ER2 | 功能描述:MOSFET 25V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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