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參數(shù)資料
| 型號(hào)： | MMDF2C02HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| 中文描述： | 互補(bǔ)對(duì)偶的TMOS功率場(chǎng)效應(yīng)晶體管2.0安培20伏特 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大小： | 356K |
| 代理商： | MMDF2C02HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(TA = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
SOURCE–DRAIN DIODE CHARACTERISTICS
(TC = 25
°
C)
Forward Voltage(2)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
(N)
(P)
—
—
0.79
1.5
1.3
2.1
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
dIS/dt = 100 A/
μ
s)
trr
(N)
(P)
—
—
23
38
—
—
ns
(IS = 3.0 Adc, VAS = 0 Vdc,
ta
(N)
(P)
—
—
18
17
—
—
(IS = 2.0 Adc, VAS = 0 Vdc,
tb
(N)
(P)
—
—
5.0
21
—
—
Reverse Recovery Stored Charge
QRR
(N)
(P)
—
—
0.025
0.034
—
—
μ
C
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
3.9 V
VDS
≥
10 V
100
°
C
25
°
C
TJ = –55
°
C
0
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
1
2
4
3
1.0
1.5
2.0
3.5
2.5
3.0
0
2
4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
ID
3
1
Figure 1. On–Region Characteristics
1
1.4
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
1.8
3.4
0
2
4
6
ID
Figure 2. Transfer Characteristics
VDS
≥
10 V
TJ = 100
°
C
25
°
C
–55
°
C
2.2
2.6
3
0
0.2
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.6
0.8
1.4
0
2
4
6
Figure 1. On–Region Characteristics
ID
1
1.2
Figure 2. Transfer Characteristics
1.6
1.8
2
5
3
1
3.7 V
3.1 V
2.7 V
2.9 V
VGS = 10 V
4.5 V
3.3 V
3.5 V
2.5 V
TJ = 25
°
C
0
0.2
0.4
0.6
0.8
1.4
1
1.2
1.6
1.8
2
3.7 V
3.1 V
2.7 V
2.5 V
2.9 V
3.3 V
3.5 V
4.5 V
3.9 V
TJ = 25
°
C
VGS = 10 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
| MMDF2C03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 制造商:ON Semiconductor 功能描述:MOSFET |
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