參數資料
型號： MMDF2C02HD
廠商： Motorola, Inc.
英文描述： COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS
中文描述： 互補對偶的TMOS功率場效應晶體管2.0安培20伏特
文件頁數： 2/12頁
文件大?。?/td> 356K
代理商： MMDF2C02HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
V(BR)DSS
—
20
—
—
Vdc
IDSS
(N)
(P)
—
—
—
—
1.0
1.0
μ
Adc
IGSS
—
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(th)
—
1.0
1.5
2.0
Vdc
RDS(on)
(N)
(P)
—
—
0.074
0.152
0.100
0.180
Ohm
RDS(on)
(N)
(P)
—
—
0.058
0.118
0.090
0.160
Ohm
gFS
(N)
(P)
2.0
2.0
3.88
3.0
—
—
mhos
f = 1.0 MHz)
Ciss
(N)
(P)
—
—
455
420
630
588
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
Coss
(N)
(P)
—
—
184
290
250
406
Transfer Capacitance
Crss
(N)
(P)
—
—
45
116
90
232
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
)
RG = 6.0
RG = 6.0
)
td(on)
(N)
(P)
—
—
11
19
22
38
ns
Rise Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
VGS = 4.5 Vdc,
tr
(N)
(P)
—
—
58
66
116
132
Turn–Off Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
td(off)
(N)
(P)
—
—
17
25
35
50
Fall Time
tf
(N)
(P)
—
—
20
37
40
74
Turn–On Delay Time
RG = 6.0
)
RG = 6.0
)
td(on)
(N)
(P)
—
—
7.0
11
21
22
Rise Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
VGS = 10 Vdc,
tr
(N)
(P)
—
—
32
21
64
42
Turn–Off Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
td(off)
(N)
(P)
—
—
27
45
54
90
Fall Time
tf
(N)
(P)
—
—
21
36
42
72
Total Gate Charge
VGS = 10 Vdc)
VGS = 10 Vdc)
QT
(N)
(P)
—
—
12.5
15
18
20
nC
Gate–Source Charge
(VDS = 16 Vdc, ID = 3.0 Adc,
Q1
(N)
(P)
—
—
1.3
1.2
—
—
Gate–Drain Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
Q2
(N)
(P)
—
—
2.8
5.0
—
—
Q3
(N)
(P)
—
—
2.4
4.0
—
—
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(3) Switching characteristics are independent of operating junction temperature.
(continued)
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