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參數(shù)資料
| 型號： | MMDF2C02E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
| 中文描述： | 2 A, 20 V, 0.2 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-05, SOIC-8 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 325K |
| 代理商： | MMDF2C02E |
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(TA = 25
°
C unless otherwise noted)(1)
Characteristic
SOURCE–DRAIN DIODE CHARACTERISTICS
(TC = 25
°
C)
Forward Voltage(2)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc)
Reverse Recovery Time
see Figure 7
Symbol
Polarity
Min
Typ
Max
Unit
VSD
(N)
(P)
—
—
1.0
1.5
1.4
2.0
Vdc
(IF = IS,
dIS/dt = 100 A/
μ
s)
trr
(N)
(P)
—
—
34
32
66
64
ns
ta
(N)
(P)
—
—
17
19
—
—
tb
(N)
(P)
—
—
17
12
—
—
QRR
(N)
(P)
—
—
0.025
0.035
—
—
μ
C
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
3.5 V
3.3 V
0
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.8
1.2
1.6
2
0
2
3
ID
4
1
TJ = 25
°
C
VGS = 10
3.7 V
3.9 V
4.1 V
4.3 V
4.5 V
5 V
4.7 V
7 V
0
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
2
3
4
1
2.5
3
3.5
4
4.5
VDS
≥
10 V
25
°
C
100
°
C
TJ = –55
°
C
0
0.25
0.75
1.5
2
0
1
3
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
ID
4
2
TJ = 25
°
C
2.7 V
2.5 V
0.5
1.75
1.25
1
5
6
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
4.5 V
4.3 V
4.1 V
3.9 V
VGS = 10 V
0
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
VDS
≥
10 V
TJ = 25
°
C
TJ = –55
°
C
25
°
C
100
°
C
2
4
6
5
1
2
2.5
3
3.5
4
3
7
7
1.5
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF2C02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
| MMDF2C03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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