
6
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel
P–Channel
400
800
1200
2000
1600
8
0
8
12
VGS
VDS
4
4
TJ = 25
°
C
Ciss
Coss
Crss
VDS = 0 V
VGS = 0 V
0
Ciss
Crss
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
C
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
RG, GATE RESISTANCE (OHMS)
0.1
10
100
100
10
1
t
VDD = 6 V
ID = 4 A
VGS = 4.5 V
TJ = 25
°
C
tr
tf
td(off)
td(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
10
V
8
6
4
2
0
0
4
2
0
QT, TOTAL CHARGE (nC)
V
5
3
1
2
4
6
8
10
ID = 4 A
TJ = 25
°
C
VDS
VGS
Q2
Q3
Q1
1
QT
400
800
1200
2000
1600
8
0
8
12
VGS
VDS
4
4
TJ = 25
°
C
VDS = 0 V
VGS = 0 V
0
Crss
Ciss
Coss
Crss
Ciss
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (Volts)
C
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
10
V
8
6
4
2
0
0
4
2
0
QT, TOTAL CHARGE (nC)
V
5
3
1
2
4
6
8
10
ID = 2 A
TJ = 25
°
C
VDS
VGS
QT
Q2
Q3
Q1
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
t
VDD = 6 V
ID = 2 A
VGS = 4.5 V
TJ = 25
°
C
tr
tf
td(off)
td(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance