參數(shù)資料
型號(hào)： MMDF2C01HD
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS
中文描述： 5.2 A, 20 V, 0.055 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 372K
代理商： MMDF2C01HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 20 Vdc)
(VGS = 0 Vdc, VDS = 12 Vdc)
Gate–Body Leakage Current
(VGS =
±
8.0 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
Drain–to–Source On–Resistance
(VGS = 2.7 Vdc, ID = 2.0 Adc)
(VGS = 2.7 Vdc, ID = 1.0 Adc)
Forward Transconductance
(VDS = 2.5 Adc, ID = 2.0 Adc)
(VDS = 2.5 Adc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
V(BR)DSS
(N)
(P)
20
12
—
—
—
—
Vdc
IDSS
(N)
(P)
—
—
—
—
1.0
1.0
μ
Adc
IGSS
—
—
—
100
nAdc
VGS(th)
(N)
(P)
0.7
0.7
0.8
1.0
1.1
1.1
Vdc
RDS(on)
(N)
(P)
—
—
0.035
0.16
0.045
0.18
Ohm
RDS(on)
(N)
(P)
—
—
0.043
0.2
0.055
0.22
Ohm
gFS
(N)
(P)
3.0
3.0
6.0
4.75
—
—
mhos
f = 1.0 MHz)
Ciss
(N)
(P)
—
—
425
530
595
740
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
Coss
(N)
(P)
—
—
270
410
378
570
Transfer Capacitance
Crss
(N)
(P)
—
—
115
177
230
250
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
RG = 2.3
)
RG = 6.0
)
td(on)
(N)
(P)
—
—
13
21
26
45
ns
Rise Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 2.7 Vdc,
VGS = 2.7 Vdc,
tr
(N)
(P)
—
—
60
156
120
315
Turn–Off Delay Time
(VDD = 6.0 Vdc, ID = 2.0 Adc,
td(off)
(N)
(P)
—
—
20
38
40
75
Fall Time
tf
(N)
(P)
—
—
29
68
58
135
Turn–On Delay Time
RG = 2.3
)
RG = 6.0
)
td(on)
(N)
(P)
—
—
10
16
20
35
Rise Time
(VDS = 6.0 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
VGS = 4.5 Vdc,
tr
(N)
(P)
—
—
42
44
84
90
Turn–Off Delay Time
(VDS = 6.0 Vdc, ID = 2.0 Adc,
td(off)
(N)
(P)
—
—
24
68
48
135
Fall Time
tf
(N)
(P)
—
—
28
54
56
110
Total Gate Charge
VGS = 4.5 Vdc)
VGS = 4.5 Vdc)
QT
(N)
(P)
—
—
9.2
9.3
13
13
nC
Gate–Source Charge
(VDS = 10 Vdc, ID = 4.0 Adc,
Q1
(N)
(P)
—
—
1.3
0.8
—
—
Gate–Drain Charge
(VDS = 6.0 Vdc, ID = 2.0 Adc,
Q2
(N)
(P)
—
—
3.5
4.0
—
—
Q3
(N)
(P)
—
—
3.0
3.0
—
—
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(3) Switching characteristics are independent of operating junction temperature.
(continued)
相關(guān)PDF資料
PDF描述
MMDF2C02E COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDF2C02E 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS
MMDF2C02HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS
MMDF2C02HDR2 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述:
MMDF2C03HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
MMDF2C03HDR2 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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