- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374468 > MMBZ33VA (WEITRON INTERNATIONAL CO., LTD.) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) PDF資料下載
參數(shù)資料
| 型號： | MMBZ33VA |
| 廠商： | WEITRON INTERNATIONAL CO., LTD. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 中文描述： | 在250μA低電流操作，低反向漏，低噪聲穩(wěn)壓二極管（250μA工作電流，小反向漏電流，低噪聲，齊納二極管） |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 116K |
| 代理商： | MMBZ33VA |
WEITRON
http://www.weitron.com.tw
WEITRON
FIG.3 Typical Capacitance Versus Bias Voltage
FIG.5 Pulse Waveform
FIG.6 Pulse Derating Curve
FIG.1 Typical Breakdown Voltage
Versus Temperature
(Upper curve for each voltage is bidirectional mode,)
lower curve is undirectional mode)
FIG.2 Typical Leakage Current
Versus Temperature
0
0
1
1
2
2
3
3
4
TEMPERATURE( C)
BIAS(V)
a
B
C
V
V
P
T
I
R
P
D
a
TEMPERATURE( C)
TEMPERATURE( C)
T , AMBIENT TEMPERATURE( C)
t, TIME(ms)
(Upper curve for each voltage is bidirectional mode,)
lower curve is undirectional mode)
-40
+50
18
0
+100
+150
15
12
9
6
3
0
-40
+25
1000
+85
+125
100
10
1
0.1
0.01
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
FIG.4 Steady State Power Derating Curve
FR-5 BOARD
ALUMINA SUBSTRATE
320
280
240
160
120
40
0
200
80
15 V
5.6 V
100
50
0
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF I
PP
.
HALF VALUE =
I
PP
2
t
P
PEAK VALUE - I
PP
100
90
80
70
60
50
40
30
20
10
00
25
50
75
100
125
150
175
200
P
P
t 10us
MMBZ5V6A Series
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBZ5V6A | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| MMBZ6V2A | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| MMBZ6V8A | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| MMBZ9V1A | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| MMBZ5221BV | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ33VAL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 26V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 26V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 26V, SOT23, Reverse Stand-Off Voltage Vrwm:26V, Breakdown Voltage Min:31.35V, Breakdown Voltage Max:34.65V, Clamping Voltage Vc Max:46V, Peak Pulse Current Ippm:870mA, Diode Case Style:SOT-23, No. of Pins:3 , RoHS Compliant: Yes |
| MMBZ33VAL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 26V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| MMBZ33VAL/DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ33VAL215 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| MMBZ33VAL-7 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 33V 225mW RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。