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參數資料
| 型號： | MMBZ33VA |
| 廠商： | WEITRON INTERNATIONAL CO., LTD. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 中文描述： | 在250μA低電流操作，低反向漏，低噪聲穩(wěn)壓二極管（250μA工作電流，小反向漏電流，低噪聲，齊納二極管） |
| 文件頁數： | 3/5頁 |
| 文件大?。?/td> | 116K |
| 代理商： | MMBZ33VA |
WEITRON
http://www.weitron.com.tw
MMBZ5V6A Series
ELECTRICALCHARACTERISTICS
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or Pins 2 and 3)
24 WATTS
40 WATTS
(T
A
= 25C unless otherwise noted)
(V
F
= 0.9 V Max @ I
F
= 10 mA)
(V
F
= 0.9 V Max @ I
F
= 10 mA)
Breakdown Voltage
Max Zener
Impedance
V
C
@ I
PP
(6)
V
RWM
Volts
RWM
V
uA
I
R
@
V
BR
(4)
Nom
(4)
(5)
(6)
(V)
@ I
T
mA
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
V
C
V
I
PP
A
V
BR
mV/
C
Device
MMBZ5V6A
MMBZ6V2A
MMBZ6V8A
MMBZ9V1A
MMBZ10V
A
Device
Marking
Min
Max
mA
5A6
6A2
6A8
9A1
10A
3.0
3.0
4.5
6.0
6.5
5.0
0.5
0.5
0.3
0.3
5.32
5.89
6.46
8.65
9.50
5.6
6.2
6.8
9.1
10
5.88
6.51
7.14
9.56
10.5
20
1.0
1.0
1.0
1.0
11
1600
0.25
8.0
8.7
9.6
14
14.2
3.0
2.76
2.5
1.7
1.7
1.26
2.80
3.4
7.5
7.5
-
-
-
-
-
-
-
-
-
-
-
-
R
I
@
V
RWM
nA
Breakdown Voltage
V
C
@ I
PP
V
C
V
V
RWM
Volts
V
BR
Nom
(V)
@ I
T
mA
I
PP
A
V
BR
θ
mV/
C
Device
MMBZ12VA
MMBZ15VA
MMBZ18VA
MMBZ20VA
MMBZ27VA
MMBZ33VA
Device
Marking
Min
Max
θ
12A
15A
18A
20A
27A
33A
8.5
12
14.5
17
22
26
200
50
50
50
50
50
11.40
14.25
17.10
19.00
25.65
31.35
12
15
18
20
27
33
12.60
15.75
18.90
21.00
28.35
34.65
1.0
1.0
1.0
1.0
1.0
1.0
17
21
25
28
40
46
2.35
1.9
1.6
1.4
1.0
0.87
7.5
12.3
15.3
17.2
24.3
30.4
4. V
BR
measured at pulse test current I
T
at an ambient temperature of 25 C.
5. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I
Z(AC)
= 0.1 I
Z(DC)
, with the AC frequency = 1.0 kHz.
6. Surge current waveform per Fig 5 and derate per Fig 6
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| MMBZ9V1A | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| MMBZ5221BV | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
相關代理商/技術參數 |
參數描述 |
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| MMBZ33VAL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 26V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 26V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 26V, SOT23, Reverse Stand-Off Voltage Vrwm:26V, Breakdown Voltage Min:31.35V, Breakdown Voltage Max:34.65V, Clamping Voltage Vc Max:46V, Peak Pulse Current Ippm:870mA, Diode Case Style:SOT-23, No. of Pins:3 , RoHS Compliant: Yes |
| MMBZ33VAL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 26V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| MMBZ33VAL/DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ33VAL215 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| MMBZ33VAL-7 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 33V 225mW RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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