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參數(shù)資料
| 型號(hào)： | MMBZ27VDA-V-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 40 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 70K |
| 代理商： | MMBZ27VDA-V-GS18 |
MMBZ27VDA-V
Vishay Semiconductors
12
3
Common Anode
MMBZ27VDA
20048
Document Number 81294
Rev. 1.1, 15-Sep-10
www.vishay.com
1
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Small Signal Zener Diodes, Dual
Features
Dual silicon planar Zener diodes with
common anode configurations
Dual package provides for bidirectional
or separate unidirectional configurations
The dual configurations protect two
separate lines with only one device
Peak power: 40 W at 1 ms (bidirectional)
For bidirectional operation, circuit connected to
pins 1 and 2. For unidirectional operation, circuit
connected to pins 1 and 3 or pins 2 and 3
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOT-23
Weight: approx. 8.8 mg
Terminals:
solderable
per
MIL-STD-750,
method 2026
Packaging codes/options:
GS18/10K per 13 " reel (8 mm tape), 10K/box
GS08/3K per 7 " reel (8 mm tape), 15K/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Nonrepetitive current pulse per figure 2 and derate above T
amb = 25 °C per figure 3.
2) FR-5 = 1 x 0.75 x 0.62 in.
3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5 % alumina.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Peak power dissipation 1)
PPK
40
W
Power dissipation
on FR-5 board 2)
Tamb = 25 °C,
derate above 25 °C
Ptot
225
1.8
mW
mW/°C
Power dissipation
on alumina substrate 3)
Tamb = 25 °C,
derate above 25 °C
Ptot
300
2.4
mW
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambiant air
RthJA
556
°C/W
Storage temperature range
Tj, Tstg
- 55 to + 150
°C
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