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參數(shù)資料
| 型號： | MMBZ27VDA-VGS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 40 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 70K |
| 代理商： | MMBZ27VDA-VGS08 |
MMBZ27VDA-V
Vishay Semiconductors
12
3
Common Anode
MMBZ27VDA
20048
Document Number 81294
Rev. 1.1, 15-Sep-10
www.vishay.com
1
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Small Signal Zener Diodes, Dual
Features
Dual silicon planar Zener diodes with
common anode configurations
Dual package provides for bidirectional
or separate unidirectional configurations
The dual configurations protect two
separate lines with only one device
Peak power: 40 W at 1 ms (bidirectional)
For bidirectional operation, circuit connected to
pins 1 and 2. For unidirectional operation, circuit
connected to pins 1 and 3 or pins 2 and 3
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOT-23
Weight: approx. 8.8 mg
Terminals:
solderable
per
MIL-STD-750,
method 2026
Packaging codes/options:
GS18/10K per 13 " reel (8 mm tape), 10K/box
GS08/3K per 7 " reel (8 mm tape), 15K/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Nonrepetitive current pulse per figure 2 and derate above T
amb = 25 °C per figure 3.
2) FR-5 = 1 x 0.75 x 0.62 in.
3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5 % alumina.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Peak power dissipation 1)
PPK
40
W
Power dissipation
on FR-5 board 2)
Tamb = 25 °C,
derate above 25 °C
Ptot
225
1.8
mW
mW/°C
Power dissipation
on alumina substrate 3)
Tamb = 25 °C,
derate above 25 °C
Ptot
300
2.4
mW
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambiant air
RthJA
556
°C/W
Storage temperature range
Tj, Tstg
- 55 to + 150
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ27VDA-V-GS08 | 功能描述:穩(wěn)壓二極管 27 Volt 40 Watt Common Anode RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMBZ27VDA-V-GS18 | 功能描述:穩(wěn)壓二極管 27 Volt 40 Wat Common Anode RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMBZ27VDC | 制造商:VISHAY SEMICONDUCTOR 功能描述:LEADED |
| MMBZ27VDC | 制造商:VISHAY SEMICONDUCTOR 功能描述:LEADED |
| MMBZ27VDC-GS08 | 制造商:Vishay Semiconductors 功能描述: |
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