參數(shù)資料
型號: MMBZ12VAL/DG
廠商: NXP SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: TVS DIODE, TO-236AB
封裝: HALOGEN FREE, PLASTIC, SMD, 3 PIN
文件頁數(shù): 2/15頁
文件大小: 78K
代理商: MMBZ12VAL/DG
MMBZXVAL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
10 of 15
NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the devices as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
9.
Test information
9.1 Quality information
This product has been qualied in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualication for discrete semiconductors, and is
suitable for use in automotive applications.
10. Package outline
Fig 10. Package outline SOT23 (TO-236AB)
04-11-04
Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
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