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參數(shù)資料
| 型號： | MMBZ12VAL/DG |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | TVS DIODE, TO-236AB |
| 封裝： | HALOGEN FREE, PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 78K |
| 代理商： | MMBZ12VAL/DG |
MMBZXVAL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
4 of 15
NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
5.
Limiting values
[1]
In accordance with IEC 61643-321 (10/1000
s current waveform).
[2]
Measured from pin 1 or 2 to pin 3.
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 or 2 to pin 3.
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
PPPM
rated peak pulse power
tp = 10/1000 s
[1][2] -40
W
IPPM
rated peak pulse current
tp = 10/1000 s
MMBZ12VAL
MMBZ12VAL/DG
-
2.35
A
MMBZ15VAL
MMBZ15VAL/DG
-
1.9
A
MMBZ18VAL
MMBZ18VAL/DG
-
1.6
A
MMBZ20VAL
MMBZ20VAL/DG
-
1.4
A
MMBZ27VAL
MMBZ27VAL/DG
-1
A
MMBZ33VAL
MMBZ33VAL/DG
-
0.87
A
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
[3] -
265
mW
[4] -
360
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
55
+150
°C
Tstg
storage temperature
65
+150
°C
Table 7.
ESD maximum ratings
Tamb =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
-30
kV
machine model
-
2
kV
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