參數(shù)資料
型號： MMBTA70LT3
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： PLASTIC, CASE 318-08, 3 PIN
文件頁數(shù)： 21/25頁
文件大?。?/td> 486K
代理商： MMBTA70LT3
MMBTA70LT1
2–416
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 17. Thermal Response
t, TIME (ms)
1.0
0.01
r(t)
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k 2.0 k
5.0 k 10 k
20 k
50 k 100 k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
Z
θJA(t) = r(t) RθJA
TJ(pk) – TA = P(pk) Z
θJA(t)
t1
t2
P(pk)
FIGURE 19
TJ, JUNCTION TEMPERATURE (°C)
104
–4
0
I C
,COLLECT
OR
CURRENT
(nA)
Figure 18. Typical Collector Leakage Current
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.
To find Z
θJA(t), multiply the value obtained from Figure 17 by the
steady state value R
θJA.
Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
10–2
10–1
100
101
102
103
–2
0
+ 20
+ 40
+ 60
+ 80 + 100 + 120 + 140 + 160
VCC = 30 V
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 V
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