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參數(shù)資料
| 型號(hào)： | MMBTA56LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Driver Transistors PNP Silicon(PNP型驅(qū)動(dòng)器晶體管) |
| 中文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 64K |
| 代理商： | MMBTA56LT1 |
MMBTA55LT1, MMBTA56LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 3)
(I
C
= 1.0 mAdc, I
B
= 0)
MMBTA55
MMBTA56
V
(BR)CEO
60
80
Vdc
EmitterBase Breakdown Voltage
(I
E
= 100 Adc, I
C
= 0)
V
(BR)EBO
4.0
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
I
CES
0.1
Adc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 80 Vdc, I
E
= 0)
MMBTA55
MMBTA56
I
CBO
0.1
0.1
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
h
FE
100
100
CollectorEmitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
0.25
Vdc
BaseEmitter On Voltage
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
V
BE(on)
1.2
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Note 4)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc, f = 100 MHz)
3. Pulse Test: Pulse Width
4. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
f
T
50
MHz
300 s, Duty Cycle
2.0%.
Figure 1. Switching Time Test Circuits
OUTPUT
TURNON TIME
1.0 V
V
CC
+40 V
R
L
* C
S
6.0 pF
R
B
100
100
V
in
5.0 F
t
r
= 3.0 ns
0
+10 V
5.0 s
OUTPUT
TURNOFF TIME
+V
BB
V
CC
+40 V
R
L
* C
S
6.0 pF
R
B
100
100
V
in
5.0 F
t
r
= 3.0 ns
5.0 s
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBTA56LT1G | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA56LT1HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR PNP 80V SOT-23 |
| MMBTA56LT1T | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R |
| MMBTA56LT3 | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA56LT3G | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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