參數(shù)資料
型號(hào)： MMBTA13LT1G
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Darlington Amplifier Transistors
中文描述： 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 82K
代理商： MMBTA13LT1G
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 2
1
Publication Order Number:
MMBTA13LT1/D
MMBTA13LT1,
MMBTA14LT1
MMBTA14LT1 is a Preferred Device
Darlington Amplifier
Transistors
NPN Silicon
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CES
30
Vdc
CollectorBase Voltage
V
CBO
30
Vdc
EmitterBase Voltage
V
EBO
10
Vdc
Collector Current Continuous
I
C
300
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1) T
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
MMBTA13LT1
SOT23
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBTA13LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
MMBTA14LT1
SOT23
3,000 / Tape & Reel
MMBTA14LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
COLLECTOR 3
BASE
1
EMITTER 2
Preferred
devices are recommended choices for future use
and best overall value.
SOT23 (TO236)
CASE 318
STYLE 6
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
1x M
1x
= Device Code
x = M for MMBTA13LT1
x = N for MMBTA14LT1
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
M
MARKING DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBTA13LT3G 功能描述:達(dá)林頓晶體管 SS DL XSTR NPN 30V RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA13-T 功能描述:達(dá)林頓晶體管 300mA 30V RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA13-TP 功能描述:達(dá)林頓晶體管 300mA 30V RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA14 功能描述:達(dá)林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA14 制造商:Fairchild Semiconductor Corporation 功能描述:Small Signal Bipolar Transistor
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