參數(shù)資料
型號: MMBT6589T1G
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: High Current Surface Mount PNP Silicon Switching Transistor for Switching Transistor for Portable Applications
中文描述: 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, CASE 318G-02, TSOP-6
文件頁數(shù): 2/5頁
文件大?。?/td> 69K
代理商: MMBT6589T1G
MMBT6589T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
30
Vdc
CollectorBase Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
V
(BR)CBO
50
Vdc
EmitterBase Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
V
(BR)EBO
5.0
Vdc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
I
CBO
0.1
Adc
CollectorEmitter Cutoff Current
(V
CES
= 30 Vdc)
I
CES
0.1
Adc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc)
I
EBO
0.1
Adc
ON CHARACTERISTICS
DC Current Gain (Note 4) (Figure 1)
(I
C
= 1.0 mA, V
CE
= 2.0 V)
(I
C
= 500 mA, V
= 2.0 V)
(I
C
= 1.0 A, V
CE
= 2.0 V)
(I
C
= 2.0 A, V
CE
= 2.0 V)
h
FE
100
100
80
40
300
CollectorEmitter Saturation Voltage (Note 4) (Figure 3)
(I
C
= 0.5 A, I
B
= 0.05 A)
(I
C
= 1.0 A, I
B
= 0.1 A)
(I
C
= 2.0 A, I
B
= 0.2 A)
V
CE(sat)
0.25
0.30
0.65
V
BaseEmitter Saturation Voltage (Note 4) (Figure 2)
(I
C
= 1.0 A, I
B
= 0.1 A)
V
BE(sat)
1.2
V
BaseEmitter Turnon Voltage (Note 4)
(I
C
= 1.0 A, V
CE
= 2.0 V)
V
BE(on)
1.1
V
Cutoff Frequency
(I
C
= 100 mA, V
CE
= 5.0 V, f = 100 MHz)
f
T
100
MHz
Output Capacitance (V
CB
= 5.0 V, f = 1.0 MHz)
4. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle
2%
Cobo
20
pF
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