參數(shù)資料
型號: MMBT6520LT1
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: High Voltage Transistor
中文描述: 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
文件頁數(shù): 2/8頁
文件大?。?/td> 231K
代理商: MMBT6520LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –1.0 mA, VCE = –10 V)
(IC = –10 mA, VCE = –10 V)
(IC = –30 mA, VCE = –10 V)
(IC = –50 mA, VCE = –10 V)
(IC = –100 mA, VCE = –10 V)
hFE
20
30
30
20
15
200
200
Collector–Emitter Saturation Voltage
(IC = –10 mA, IB = –1.0 mA)
(IC = –20 mA, IB = –2.0 mA)
(IC = –30 mA, IB = –3.0 mA)
(IC = –50 mA, IB = –5.0 mA)
VCE(sat)
–0.30
–0.35
–0.50
–1.0
Vdc
Base–Emitter Saturation Voltage
(IC = –10 mA, IB = –1.0 mA)
(IC = –20 mA, IB = –2.0 mA)
(IC = –30 mA, IB = –3.0 mA)
Base–Emitter On Voltage
(IC = –100 mA, VCE = –10 V)
SMALL–SIGNAL CHARACTERISTICS
VBE(sat)
–0.75
–0.85
–0.90
Vdc
VBE(on)
–2.0
Vdc
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –20 V, f = 20 MHz)
fT
40
200
MHz
Collector–Base Capacitance
(VCB= –20 V, f = 1.0 MHz)
Ccb
6.0
pF
Emitter–Base Capacitance
(VEB= –0.5 V, f = 1.0 MHz)
Ceb
100
pF
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