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參數(shù)資料
| 型號(hào)： | MMBT6427 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SOT-23, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 22K |
| 代理商： | MMBT6427 |
DS30048 Rev. B-2
1 of 1
MMBT6427
MMBT6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and
Switching
High Current Gain
Characteristic
Symbol
MMBT6427
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
12
V
Collector Current - Continuous (Note 1)
IC
500
mA
Power Dissipation (Note 1)
Pd
350
mW
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
357
K/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K1D
Weight: 0.008 grams (approx.)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
40
V
IC = 100
A, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 100mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
12
V
IE = 10
A, IC = 0
Collector Cutoff Current
ICBO
50
nA
VCB = 30V, IE = 0
Collector Cutoff Current
ICEO
1.0
A
VCE = 25V, IB = 0
Emitter Cutoff Current
IEBO
50
nA
VEB = 10V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
10,000
20,000
14,000
100,000
200,000
140,000
IC = 10mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
IC = 500mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
1.2
1.5
V
IC = 50mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
Base- Emitter Saturation Voltage
VBE(SAT)
2.0
V
IC = 500mA, IB = 0.5mA
Base- Emitter On Voltage
VBE(ON)
1.75
V
IC = 50mA, VCE =5.0V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8.0 Typical
pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
15 Typical
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
≤ 300s, duty cycle ≤ 2%.
POWER SEMICONDUCTOR
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT6427_Q | 功能描述:達(dá)林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBT6427-7 | 功能描述:達(dá)林頓晶體管 40V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBT6427-7-F | 功能描述:達(dá)林頓晶體管 40V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBT6427LT1 | 功能描述:達(dá)林頓晶體管 500mA 40V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBT6427LT1G | 功能描述:達(dá)林頓晶體管 500mA 40V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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