參數(shù)資料
型號： MMBT4401
廠商： GE Security, Inc.
英文描述： Small Signal Transistors(NPN)(小信號晶體管（NPN）)
中文描述： 小信號晶體管（NPN）的（小信號晶體管（NPN）的）
文件頁數(shù)： 2/3頁
文件大小： 117K
代理商： MMBT4401
MMBT4401
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at I
C
= 0.1 mA, I
E
= 0
Collector-Emitter Breakdown Voltage
(1)
at I
C
= 1 mA, I
B
= 0
V
(BR)CBO
60
D
Volts
V
(BR)CEO
40
D
Volts
Emitter-Base Breakdown Voltage
at I
E
= 0.1 mA, I
C
= 0
V
(BR)EBO
6.0
D
Volts
Collector-Emitter Saturation Voltage
at I
C
= 150 mA, I
B
= 15 mA
at I
C
= 500 mA, I
B
= 50 mA
V
CEsat
V
CEsat
D
D
0.40
0.75
Volts
Volts
Base-Emitter Saturation Voltage
at I
C
= 150 mA, I
B
= 15 mA
at I
C
= 500 mA, I
B
= 50 mA
V
BEsat
V
BEsat
0.75
D
0.95
1.20
Volts
Volts
Collector Cutoff Current
at V
EB
= 0.4 V, V
CE
= 35 V
I
CEX
D
100
nA
Base Cutoff Current
at V
EB
= 0.4 V, V
CE
= 35 V
I
BEV
D
100
nA
DC Current Gain
at V
CE
= 1 V, I
C
= 0.1 mA
at V
CE
= 1 V, I
C
= 1 mA
at V
CE
= 1 V, I
C
= 10 mA
at V
CE
= 1 V, I
C
= 150 mA
(1)
at V
CE
= 2 V, I
C
= 500 mA
(1)
h
FE
h
FE
h
FE
h
FE
h
FE
20
40
80
100
40
D
D
D
D
D
D
D
D
300
D
Input Impedance
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
ie
1
15
k
W
Voltage Feedback Ratio
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
re
0.1 ￥ 10
-4
8 ￥ 10
-4
D
Current Gain-Bandwidth Product
at V
CE
= 10 V, I
C
= 20 mA, f = 100 MHz
f
T
250
D
MHz
Collector-Base Capacitance
at V
CB
= 5 V,f = 1 MHz, I
E
=0
C
CBO
D
6.5
pF
Emitter-Base Capacitance
at V
EB
= 0.5 V,f = 1 MHz, I
C
=0
C
EBO
D
30
pF
NOTES:
(1) Pulse test: pulse width 2300
m
s, cycle 2 2.0%
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT4401_D87Z 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4401_Q 功能描述:兩極晶體管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4401-13 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 10K - Tape and Reel
MMBT4401-13-02-F 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 3K - Tape and Reel
MMBT4401-13-03-F 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR NPN SOT-23 3K - Tape and Reel
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