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參數(shù)資料
| 型號(hào)： | MMBT2907AWT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistor(PNP Silicon) |
| 中文描述： | 通用晶體管（民進(jìn)黨硅） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 76K |
| 代理商： | MMBT2907AWT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 package
which is designed for low power surface mount applications.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
–60
Vdc
Collector–Base Voltage
–60
Vdc
Emitter–Base Voltage
–5.0
Vdc
Collector Current — Continuous
–600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
PD
150
mW
Thermal Resistance Junction to Ambient
RJA
TJ, Tstg
833
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBT2907AWT1 = 2F
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–60
—
Vdc
Collector–Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
–60
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
IBL
—
–50
nAdc
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
ICEX
—
–50
nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT2907AWT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
1
2
3
CASE 419–02, STYLE 3
SOT–323/SC–70
COLLECTOR
3
1
BASE
2
EMITTER
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| MMBT3416LT3 | General Purpose Amplifier(NPN Silicon) |
| MMBT5401LT1 | High Voltage Transistor |
| MMBT5401 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT5401-7 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2907AWT1G | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2907AWT1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR PNP -60V |
| MMBT2907FW | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT2907-G | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS |
| MMBT2907L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP General Purpose Transistor |
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