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參數(shù)資料
| 型號(hào)： | MMBF2201NT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| 中文描述： | 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | MMBF2201NT1 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10
μ
A)
V(BR)DSS
20
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
±
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
rDS(on)
—
—
0.75
1.0
1.0
1.4
Ohms
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
gFS
—
450
—
mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
(VDG = 5.0 V)
Ciss
Coss
Crss
—
45
—
pF
Output Capacitance
—
25
—
Transfer Capacitance
—
5.0
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
RL = 50
)
td(on)
tr
td(off)
tf
—
2.5
—
ns
Rise Time
(VDD = 15 Vdc, ID = 300 mAdc,
—
2.5
—
Turn–Off Delay Time
—
15
—
Fall Time
—
0.8
—
Gate Charge (See Figure 5)
QT
—
1400
—
pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
ISM
VSD
—
—
0.3
A
Pulsed Current
Forward Voltage(2)
—
—
0.75
—
0.85
—
V
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
TYPICAL CHARACTERISTICS
Figure 1. Typical Drain Characteristics
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 2. On Resistance versus Temperature
TEMPERATURE (
°
C)
I
R
0.5
0.6
0.7
0.8
0.9
1.0
0
4
0
8
7
9
10
0.6
0.8
1.0
1.2
1.4
1.6
0
–60
1
2
3
5
6
0.1
0.2
0.3
0.4
0.4
0.2
–40
–20
0
20
40
60
80
100
120
140
160
VGS = 4 V
VGS = 3.5 V
VGS = 2.5 V
VGS = 3 V
VGS = 4.5 V
VGS = 10 V
ID = 100 mA
ID = 300 mA
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| MMBF2201NT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323 |
| MMBF2201NT1G | 功能描述:MOSFET 20V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF2201PT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
| MMBF2202PT1 | 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBF2202PT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 |
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