參數(shù)資料
型號(hào): MMBF0201
廠商: Motorola, Inc.
英文描述: N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
中文描述: N溝道增強(qiáng)型MOSFET的任務(wù)操作系統(tǒng)
文件頁數(shù): 2/6頁
文件大小: 178K
代理商: MMBF0201
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10
μ
A)
V(BR)DSS
20
Vdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
1.0
10
μ
Adc
IGSS
±
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
rDS(on)
0.75
1.0
1.0
1.4
Ohms
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
gFS
450
mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
(VDG = 5.0 V)
Ciss
Coss
Crss
45
pF
Output Capacitance
25
Transfer Capacitance
5.0
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
RL = 50
)
td(on)
tr
td(off)
tf
2.5
ns
Rise Time
(VDD = 15 Vdc, ID = 300 mAdc,
2.5
Turn–Off Delay Time
15
Fall Time
0.8
Gate Charge (See Figure 5)
QT
1400
pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
ISM
VSD
0.3
A
Pulsed Current
Forward Voltage(2)
0.75
0.85
V
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
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