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參數(shù)資料
| 型號(hào)： | MMBD717 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Common Anode Schottky Barrier Diodes |
| 中文描述： | 共陽(yáng)極肖特基二極管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | MMBD717 |
5–2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
25
°
C
125
°
C
85
°
C
TA = 150
°
C
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes:
3. tp trr
+10 V
2 k
820
0.1
μ
F
DUT
VR
100
μ
H
0.1
μ
F
50
OUTPUT
PULSE
GENERATOR
50
INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
0
0.05
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Typical Forward Voltage
0.1
10
1.0
0.1
85
°
C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
1.0
0
VR, REVERSE VOLTAGE (VOLTS)
0.5
0
C
2.0
4.0
I
Figure 3. Reverse Current versus Reverse
Voltage
Figure 4. Typical Capacitance
–40
°
C
25
°
C
I
μ
A
–55
°
C
150
°
C
125
°
C
100
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
1.0
1.5
2.0
2.5
3.0
6.0
8.0
10
12
14
16
18
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBD717LT1 | Common Anode Schottky Barrier Diodes |
| MMBD717LT1D | Common Anode Schottky Barrier Diodes |
| MMBF0201N | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MMBF0201 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MMBF2201NT1 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD717_09 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES |
| MMBD717A | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES |
| MMBD717A-T1 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| MMBD717AW | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:COMMON ANODE SCHOTTKY BARRIER DIODES |
| MMBD717AW-T1 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
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