參數(shù)資料
型號: MMBD7000LT3
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Dual Switching Diode
中文描述: 0.2 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
封裝: CASE 318-08, 3 PIN
文件頁數(shù): 2/4頁
文件大小: 58K
代理商: MMBD7000LT3
MMBD7000LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100 Adc)
V
(BR)
100
Vdc
Reverse Voltage Leakage Current
(V
R
= 50 Vdc)
(V
R
= 100 Vdc)
(V
R
= 50 Vdc, 125
°
C)
I
R
I
R2
I
R3
1.0
3.0
100
Adc
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 100 mAdc)
V
F
0.55
0.67
0.75
0.7
0.82
1.1
Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc) (Figure 1)
t
rr
4.0
ns
Capacitance (V
R
= 0 V)
C
1.5
pF
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
t
rr
+10 V
2.0 k
820
0.1 F
DUT
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
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