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參數(shù)資料
| 型號(hào)： | MMBD2835LT1 |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | Monolithic Dual Switching Diodes |
| 中文描述： | 單片雙開(kāi)關(guān)二極管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | MMBD2835LT1 |
Zowie Technology Corporation
Monolithic Dual Switching Diode
MMBD2835
1
2
3
SOT-23
Rating
Symbol
V
R
I
F
Value
Unit
Vdc
mAdc
Characteristic
Symbol
Min.
Max.
Unit
Continuous Reverse Voltage
Peak Forward Current
35
100
Characteristic
Symbol
Max.
Unit
Total Device Dissipation FR-5 Board
(1)
T
A
=25
Derate above 25
Thermal Resistance, Junction to Ambient
o
C
C
P
D
225
1.8
556
mW
mW /
o
C
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25
Derate above 25
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
o
C
C
P
D
V
F
300
2.4
417
-
-
-
1000
1000
1200
( I
F
=10 mAdc )
( I
F
=50 mAdc )
( I
F
=100 mAdc )
mW
mW /
o
C
o
C / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
MMBD2835=A3X
ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted) (EACH DIODE)
V
(BR)
35
-
Vdc
mVdc
OFF CHARACTERISTICS
R
JA
o
C / W
o
C
R
JA
T
J,
T
STG
Forward Voltage
I
R
-
-
0.1
uAdc
Reverse Voltage Leakage Current
(V
R
=20 Vdc )
Reverse Breakdown Voltage
( I
BR
=100 uAdc )
C
J
-
4.0
pF
Diode Capacitance
( V
R
=0, f=1.0MH
Z
)
trr
-
4.0
nS
-55 to +150
Reverse Recovery Time
( I
F
=I
R
=10 mAdc, I
R
(REC=1.0mAdc, measured at I
R
=1.0mA R
L=
100 )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
Zowie Technology Corporation
REV. : 0
CATHODE
1
CATHODE
ANODE
3
2
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PDF描述 |
|---|---|
| MMBD2836 | MONOLITHIC DUAL SWITCHING DIODE |
| MMBD2836LT1 | Monolithic Dual Switching Diodes |
| MMBD2836LT1 | Monolithic Dual Switching Diodes |
| MMBD2836LT1 | Monolithic Dual Switching Diodes |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD2835LT1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Monolithic Dual Switching Diodes |
| MMBD2835LT1G | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 35V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMBD2835LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Monolithic Dual Switching Diodes |
| MMBD2836 | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:Surface mount switching diode |
| MMBD2836G | 制造商:ZOWIE 制造商全稱:Zowie Technology Corporation 功能描述:Monolithic Dual Switching Diode |
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