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參數(shù)資料
| 型號： | MMBD110T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Schottky Barrier Diodes |
| 中文描述： | 肖特基勢壘二極管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 153K |
| 代理商： | MMBD110T1 |
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
MMBD110T1
Figure 1. Reverse Leakage
TA, AMBIENT TEMPERATURE (
°
C)
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Noise Figure
PLO, LOCAL OSCILLATOR POWER (mW)
C
N
,
I
,
I
0.1
0.2
0.5
1.0
2.0
5.0
10
11
10
9
8
7
6
5
4
3
2
1
0
1.0
2.0
3.0
4.0
1.0
0.9
0.8
0.7
0.6
0.3
0.4
0.5
0.6
100
10
1.0
0.1
0.7
0.8
30
40
50
60
70
80
100
1.0
0.7
0.5
130
110
120
90
0.2
0.1
0.07
0.05
0.02
0.01
Figure 5. Noise Figure Test Circuit
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
NOISE
FIGURE METER
H.P. 342A
DIODE IN
TUNED
MOUNT
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
VR = 3.0 Vdc
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(Test Circuit Figure 5)
TA = –40
°
C
TA = 85
°
C
TA = 25
°
C
Note 1 — CC and CT are measured using a capacitance bridge
(Boonton Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscil-
lator (LO) frequency of 1.0 GHz. The LO power is ad-
justed for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30
MHz, see Figure 5.
NOTES ON TESTING AND SPECIFICATIONS
MMBD110T1
MMBD110T1
MMBD110T1
MMBD110T1
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| MMBD1201_Q | 功能描述:整流器 High Conductance Ultra Fast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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