Analog Integrated Circuit Device Data
Freescale Semiconductor
11
908E626
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
MICROCONTROLLER PARAMETRICS
Table 4. DYNAMIC ELECTRICAL CHARACTERISTICS
All characteristics are for the analog chip only. Please refer to the 68HC908EY16 datasheet for characteristics of the
microcontroller chip. Characteristics noted under conditions 9.0 V VSUP 16 V, -40 C TJ 135 C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25 C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN PHYSICAL LAYER
TXD LOW to LIN LOW
TXD HIGH to LIN HIGH
LIN LOW to RXD LOW
LIN HIGH to RXD HIGH
TXD Symmetry
RXD Symmetry
tTXD-LIN-LOW
tTXD-LIN-HIGH
tLIN-RXD-LOW
tLIN-RXD-HIGH
tTXD-SYM
tRXD-SYM
–
-2.0
–
4.0
–
6.0
8.0
2.0
s
Output Falling Edge Slew Rate
(14),
(16)80% to 20%
SRF
-1.0
-2.0
-3.0
V/
s
20% to 80%, RBUS > 1.0 k, CBUS < 10 nF
SRR
1.0
2.0
3.0
V/
s
LIN Rise/Fall Slew Rate Symmetry
(14),
(16)SRS
-2.0
–
2.0
s
AUTONOMOUS WATCHDOG (AWD)
AWD Oscillator Period
tOSC
–40
–
s
AWD Period Low = 512 tOSC
TJ < 25 °C
TJ
25 °C
tAWDPH
16
27
22
34
28
ms
AWD Period High = 256 tOSC
TJ < 25 °C
TJ
25 °C
tAWDPL
8.0
13.5
11
17
14
ms
AWD Cyclic Wake-up On Time
tAWDHPON
–90
–
s
Notes
14.
All LIN characteristics are for initial LIN slew rate selection (20 kbaud) (SRS0:SRS1= 00).
15.
16.
Table 5. MICROCONTROLLER
For a detailed microcontroller description, refer to the MC68HC908EY16 datasheet.
Module
Description
Core
High Performance HC08 Core with a Maximum Internal Bus Frequency of 8.0 MHz
Timer
Two 16-Bit Timers with Two Channels (TIM A and TIM B)
Flash
16 k Bytes
RAM
512 Bytes