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| 型號(hào)： | MM908E621ACDWBR2 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror |
| 中文描述： | 綜合四半橋和三高的嵌入式微控制器和LIN高端側(cè)鏡 |
| 文件頁(yè)數(shù)： | 12/62頁(yè) |
| 文件大小： | 540K |
| 代理商： | MM908E621ACDWBR2 |
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Analog Integrated Circuit Device Data
Freescale Semiconductor
12
908E621
STATIC ELECTRICAL CHARACTERISTICS
HALF-BRIDGE OUTPUTS HB1 AND HB2
Switch On Resistance
High-Side, T
J
= 25
°
C, I
LOAD
= 1.0 A
Low-Side, T
J
= 25
°
C, I
LOAD
= 1.0 A
R
DS(ON)-HB12
–
–
750
750
900
900
m
Overcurrent Shutdown
High-Side
Low-Side
I
HBOC12
1.0
1.0
–
–
1.5
1.5
A
Overcurrent Shutdown blanking time
(18)
t
OCB
–
4-8
–
μ
s
Switching Frequency
(18)
f
PWM
–
–
25
kHz
Free-Wheeling Diode Forward Voltage
High-Side, T
J
= 25
°
C, I
LOAD
= 1.0 A
Low-Side, T
J
= 25
°
C, I
LOAD
= 1.0 A
V
HSF
V
LSF
–
–
0.9
0.9
–
–
V
Leakage Current
I
LeakHB
–
<0.2
10
μA
Low-Side Current to Voltage Ratio
(19)
V
ADOUT
[V] / I
HB
[A], CSA = 1, (measured and trimmed I
HB
= 200 mA)
V
ADOUT
[V] / I
HB
[A], CSA = 0, (measured and trimmed I
HB
= 500 mA)
CR
RATIOHB12
17.5
3.5
25.0
5.0
32.5
6.5
V/A
HALF-BRIDGE OUTPUTS HB3 AND HB4
Switch On Resistance
High-Side, T
J
= 25
°
C, I
LOAD
= 1.0 A
Low-Side, T
J
= 25
°
C, I
LOAD
= 1.0 A
R
DS(ON)-HB34
–
–
275
275
325
325
m
Overcurrent Shutdown
High-Side
Low-Side
I
HBOC34
4.8
4.8
–
–
7.2
7.2
A
Overcurrent Shutdown blanking time
(18)
t
OCB
–
4-8
–
μ
s
Switching Frequency
(18)
f
PWM
–
–
25
kHz
Free-Wheeling Diode Forward Voltage
High-Side, T
J
= 25
°
C, I
LOAD
= 1.0 A
Low-Side, T
J
= 25
°
C, I
LOAD
= 1.0 A
V
HSF
V
LSF
–
–
0.9
0.9
–
–
V
Leakage Current
I
LeakHB
–
<0.2
10
μA
Low-Side Current to Voltage Ratio
(19)
V
ADOUT
[V] / I
HB
[A], CSA = 1, (measured and trimmed I
HB
= 500 mA)
V
ADOUT
[V] / I
HB
[A], CSA = 0, (measured and trimmed I
HB
= 2 A)
CR
RATIOHB34
3.5
0.7
5.0
1.0
6.5
1.3
V/A
Notes
18.
19.
This parameter is guaranteed by process monitoring but is not production tested.
This parameter is guaranteed only if correct trimming was applied
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V
≤
V
SUP
≤
16 V, -40
°
C
≤
T
J
≤
125
°
C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T
A
= 25
°
C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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