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參數(shù)資料
| 型號： | MJW21196 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Power Transistors(硅功率晶體管) |
| 中文描述： | 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-247AD |
| 封裝： | CASE 340L-02, TO-247, 3 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 75K |
| 代理商： | MJW21196 |
MJW21195 (PNP) MJW21196 (NPN)
http://onsemi.com
5
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 13 is based on T
J(pk)
= 150
°
C; T
C
is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
TYPICAL CHARACTERISTICS
Figure 13. Active Region Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
100
1
10
100
1000
10
1
0.1
100 ms
10 ms
1 Sec
PNP MJW21195
NPN MJW21196
I
C
,
Figure 14. Active Region Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
100
1
10
100
1000
10
1
0.1
100 ms
10 ms
1 Sec
I
C
,
Figure 15. MJW21195 Typical Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
C
Figure 16. MJW21196 Typical Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
C
10000
1000
100
100
10
1.0
0.1
10000
1000
100
100
10
1.0
0.1
T
J
= 25
°
C
f
test
= 1 MHz
C
ob
C
ib
T
J
= 25
°
C
f
test
= 1 MHz
C
ob
C
ib
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJW21196G | 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW25 | 制造商:MINMAX 制造商全稱:Minmax Technology Co., Ltd. 功能描述:DC/DC CONVERTER 25W, Highest Power Density 1 |
| MJW25-12D15 | 制造商:MINMAX 制造商全稱:Minmax Technology Co., Ltd. 功能描述:DC/DC CONVERTER 25W, Highest Power Density 1 |
| MJW3281A | 功能描述:兩極晶體管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW3281A_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS |
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